论文部分内容阅读
据美刊《微波杂志》报导,日本在发展用于微波接收的低噪声混频二极管方面正在取得明显的进展。日本电气公司正提供实用的砷化镓肖特基二极管,在9千兆赫下,噪声系数为5分贝,准毫米波的变频损耗为3.5分贝,毫米波二极管的变频损耗为4.5分贝。年内该公司还计划提供工作在60千兆赫、变频损耗为5.5分贝的砷化镓肖特基二极管,中频是1.7千兆赫。日本东芝公司已发展了梁式引线的砷化镓肖特基二极管,在9千兆赫下变频损耗为4
According to the U.S. magazine Microwave Journal, Japan is making significant progress in developing low-noise mixer diodes for microwave reception. NEC is offering a practical gallium arsenide Schottky diode with a noise figure of 5 dB at 9 GHz, a quasi-millimeter-wave frequency conversion loss of 3.5 dB and a millimeter-wave diode with a conversion loss of 4.5 dB. The company also plans to offer gallium arsenide Schottky diodes operating at 60 GHz with a 5.5 dB conversion loss, with an intermediate frequency of 1.7 GHz. Toshiba Japan has developed a beam-type gallium arsenide Schottky diode with a conversion loss of 9 at 4 GHz