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采用八能带K-P理论以及有限差分方法,研究了沿[001]方向生长的InAs/GaSb二类断带量子阱体系的能带结构、波函数分布和对[110]方向线性偏振光的吸收特性.研究发现,通过改变InAs或GaSb层的厚度,可有效调节该量子阱体系的能带结构及波函数分布.计算结果表明,当InAs/GaSb量子阱的导带底与价带顶处于共振状态时,导带基态与轻空穴基态杂化效应很小,且导带基态与第一激发态的波函数存在较大的重叠,导带基态与第一激发态之间在布里渊区中心处的跃迁概率明显大于导带底与价带顶处于非共振状态时的跃迁概率.研究结果对基于InAs/GaSb二类断带量子阱体系的中远红外波段的新型级联激光器、探测器等光电器件的设计具有重要意义.
The energy band structure, wave function distribution and absorption of linearly polarized light in the [110] direction have been investigated by using the theory of octopus band KP and the finite difference method. The results show that by changing the thickness of InAs or GaSb layer, the energy band structure and the wave function distribution of the quantum well system can be effectively tuned.The calculated results show that when the conduction band bottom and the valence band top of the InAs / GaSb quantum well are in resonance , The ground-state hybridization of the conduction band ground state and the light-hole ground state is very small, and the wavefunctions of the conduction band ground state and the first excitation state have large overlap. The conduction band ground state and the first excitation state are located in the center of the Brillouin zone The probability of transition is obviously larger than the transition probability when the conduction band bottom and the valence band top are in non-resonance state.Results The new cascaded lasers, detectors and other optoelectronics based on the mid-to-far infrared band of the InAs / GaSb two-type quantum well quantum well system The design of the device is of great importance.