论文部分内容阅读
在SOI脊形波导上通过光刻的方法制作了高阶布拉格光栅。采用顶层Si厚为2μm的SOI基片,通过半导体芯片制备中的光刻工艺,在脊高为935 nm,波导宽度为2μm的脊形波导上,分别制作了刻蚀深度为565 nm和935 nm的起伏型高阶布拉格光栅,测试表明,在1 540~1 640 nm波长范围内,得到了大于10 dB的消光比,实现了高阶布拉格光栅在SOI脊形波导上的滤波效果。理论和实验都证明了光栅刻蚀深度的增大将有利于增加高阶布拉格光栅的耦合系数,以及光栅周期数的增加会引起更大的光栅损耗。
High-order Bragg gratings have been fabricated by photolithography on SOI ridge waveguides. The SOI substrate with the top Si thickness of 2μm was used to fabricate a semiconductor wafer with the etching depth of 565 nm and 935 nm respectively on a ridge waveguide with a ridge height of 935 nm and a waveguide width of 2 μm. The results show that the extinction ratio of more than 10 dB is obtained in the wavelength range from 1 540 to 1 640 nm and the filtering effect of high order Bragg gratings on SOI ridge waveguide is achieved. Both theory and experiment prove that the increase of the depth of grating etching will help to increase the coupling coefficient of high order Bragg grating and the increase of grating period will cause more grating loss.