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低温过渡液相(TLP)连接是一种在宽禁带半导体互连领域极具应用潜力的高温电子封装技术。本文研究了Ag/Sn体系在不同温度下进行TLP连接时界面金属间化合物(IMCs)的生长机理。结果表明:Ag_3Sn晶粒主要呈扇贝状形态,而棱柱状、针状、中空柱状、板状和线状等形态也会产生;然而,随着保温时间的延长波浪状Sn/Ag_3Sn界面将变得更加平坦,分析表明这与晶粒粗化及基板Ag原子各向异性的扩散流有关;同时,在Ag_3Sn晶粒表面观察到大量纳米Ag_3Sn颗粒形成,它们形核长大于液相富Ag区,并在凝固过程中被Ag_3Sn晶粒吸附沉淀所致。在动力学方面,Ag_3Sn晶粒生长遵循抛物线规律,主要受到体积扩散控制,且250、280和320°C下生长速率常数分别为5.83×10~(-15)、7.83×10~(-15)和2.83×10~(-14)m~2/s,反应活化能为58.89 kJ/mol。
Low-temperature transitional-phase (TLP) connection is a promising high-temperature electronic packaging technology for wide band-gap semiconductor interconnects. In this paper, the growth mechanism of interfacial intermetallics (IMCs) in TL / Ag / Sn system at different temperatures was studied. The results show that the grains of Ag_3Sn are mainly scallop, and the shapes of prismatic, acicular, hollow columnar, plate-like and linear are also produced. However, the wavy Sn / Ag_3Sn interface will become as the holding time prolongs More flat, the analysis shows that this is related to the coarsening of grains and the anisotropic diffusion flow of Ag atoms in the substrate. Meanwhile, a large amount of nano-Ag3Sn particles are observed on the surface of Ag3Sn grains, and their nuclei grow longer than the Ag-rich liquid region In the solidification process was Ag_3Sn crystal particles due to adsorption and precipitation. In terms of kinetics, the grain growth of Ag_3Sn follows the parabolic law and is mainly controlled by volume diffusion. The growth rate constants of Ag_3Sn are 5.83 × 10 ~ (-15), 7.83 × 10 ~ (-15) And 2.83 × 10 ~ (-14) m ~ 2 / s, respectively. The activation energy of the reaction was 58.89 kJ / mol.