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The investigation on G)s/AlG)s multiple quantum well Self Electro-optic Effec t Device (SEED) arrays for flip|chip bonding optoelectronic smart pixels has be en reported. In order to increase the absorption of the intrinsic region, the number of quantum well periods is defined as 90 pairs. The G)s/AlG)s multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic chara cteristics of elements in SEED arrays.
The investigation on G) s / AlG) s multiple quantum well Self Electro-optic Effec t Device (SEED) arrays for flip chip bonding optoelectronic smart pixels has be reported. In order to increase the absorption of the intrinsic region, The number of quantum well periods is defined as 90 pairs. The G) s / AlG) s multiple quantum well devices are designed for 850 nm operation. The measurement results under applied biases show the good optoelectronic charateristics elements in SEED arrays.