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一、概述近年来,非屏蔽半导体器件的应用愈来愈广泛,而许多器件又工作于电磁辐射环境中。长久以来,电磁波对半导体器件的辐射效应并没有引起人们足够的重视。实验证明,非屏蔽半导体器件经过一定强度的电磁波辐射后,其参数会发生漂移,早期失效时间缩短。这些变化都会影响半导体器件的使用可靠性,特别是一些敏感器件在高强度的电磁辐射环境中工作时,这种影响尤为突出。但是事物总是一分为二的,电磁波对半导体器件的影响又可以使我们有可能利用这种效应来剔除早期失效的半导体器件。
I. Overview In recent years, the application of unshielded semiconductor devices more and more widely, and many devices work in the electromagnetic radiation environment. For a long time, the radiation effects of electromagnetic waves on semiconductor devices have not attracted enough attention. Experiments show that the unshielded semiconductor device after a certain intensity of electromagnetic radiation, the drift of its parameters, early failure time shortened. These changes will affect the reliability of the use of semiconductor devices, especially when some sensitive devices in high-intensity electromagnetic radiation environment, this effect is particularly prominent. However, things are always divided into two parts. The influence of electromagnetic waves on the semiconductor devices can make it possible for us to take advantage of this effect to eliminate the early failed semiconductor devices.