纳米尺度分子器件是最有可能实现超高密度集成电路的途径之一,而纳米间隙电极对的制备是分子器件的构筑基础.本文利用热处理诱导晶间断裂现象来进行纳米间隙电极对的构筑.通过低温热处理过程实现单个金晶界结的断裂,使其从晶界结转化为悬空纳米间隙电极对.所制备的纳米间隙电极对的间隙尺寸可达到亚5纳米,采用传统的微纳米加工方法很难实现该尺寸间隙电极对.利用热处理诱导晶间断裂所制备的纳米间隙电极对具有诸多优点,如形状稳定性好、间隙中无杂质颗粒残留等,有望用来构筑两端或三端分子器件. Nano-scale molecular devices are the most likely way to achieve ultra-high density integrated circuits, and the preparation of nano-gap electrode pairs is the basis of molecular devices.In this paper, the use of heat treatment induced intergranular fracture phenomenon for nano-gap electrode pairs. Through the low temperature heat treatment process to achieve a single gold grain boundary junction rupture, the transition from the grain boundary to a vacant nanogap electrode pairs prepared nanogap electrode gap size can reach 5 nanometers, the use of traditional micro-nano processing method is very It is difficult to achieve the size gap electrode pairs.Using heat treatment induced intergranular fracture prepared nano-gap electrode pairs has many advantages, such as shape stability, no impurities in the gap residual, is expected to be used to build two-terminal or three-terminal molecular devices .