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如果使铁电体和半导体直接接触,那末铁电体的极化状态能够改变半导体的电性能。这种效应已被用来制作自适应电阻器和晶体管的样品。根据铁电体、半导体和这二种电活性材料界面的基本性能评述了这些铁电-半导体器件的特性。发现制造方法严重地影响器件的电稳定性。特别是,在块状半导体材料上生长薄膜铁电体层的器件比在块状铁电体材料上生长薄膜半导体所组成的器件更稳定。本文介绍了几种三端和四端铁电-半导体器件。这些器件具有不易消失和模拟记忆的很重要的优点。而且通过铁电体的电转换记忆状态能以兆赫的速率改变。铁电-半导体器件的一个很重要的潜在应用是在集成电路中使大量的自适应晶体管微小型化。
If the ferroelectric and the semiconductor are in direct contact, then the polarization state of the ferroelectric can change the electrical properties of the semiconductor. This effect has been used to make samples of adaptive resistors and transistors. The characteristics of these ferroelectric-semiconductor devices are reviewed according to the basic properties of the ferroelectrics, semiconductors and interfaces of these two electro-active materials. The manufacturing method was found to seriously affect the device’s electrical stability. In particular, devices that grow thin film ferroelectric layers on bulk semiconductor materials are more stable than those that grow thin film semiconductors on bulk ferroelectric materials. This article describes several three-terminal and four terminal ferroelectric-semiconductor devices. These devices have very important advantages of not disappearing and simulating memory. Also, the state of the memory by the electrical conversion of the ferroelectric can be changed at a rate of megahertz. Ferroelectric - A very important potential application for semiconductor devices is the miniaturization of a large number of adaptive transistors in integrated circuits.