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采用石英晶体微天平实时监测薄膜生长速率,通过控制衬底温度与薄膜生长速率,在柔性ITO导电衬底上真空蒸发沉积了铜酞菁薄膜。X射线衍射分析表明,适当提高衬底温度与薄膜生长速率,可促进薄膜的有序生长。当衬底温度为90℃,生长速率为10nm/min时,薄膜的有序度最高,薄膜晶型呈(相和(200)晶面。
The growth rate of thin films was monitored by quartz crystal microbalance in real time. Copper phthalocyanine films were deposited by vacuum evaporation on a flexible ITO conductive substrate by controlling the substrate temperature and film growth rate. X-ray diffraction analysis shows that proper increase of substrate temperature and film growth rate can promote the orderly growth of the film. When the substrate temperature is 90 ℃ and the growth rate is 10nm / min, the ordered degree of the film is the highest, and the film is (phase and (200) crystal).