作为光伏器件或集成电路电极引线的金属化薄膜,应有较好的抗电迁移性能,以保持较低的接触电阻和较好的接触稳定性。提高抗电迁移性能的途径是使薄膜具有较大晶粒尺寸和较高取向度。这种薄膜衬底也有利于进一步生长大晶粒的光伏器件吸收材料。意大利Romeo等发展了一种新的薄膜淀积工艺——准液相外延法,即在低于但接近其熔点的金属层上生长单一取向大晶粒薄膜。这种方法对基片要求不高、工艺也较简单。 Metallized films as electrode leads for photovoltaic devices or integrated circuits should have good electromigration resistance to maintain lower contact resistance and better contact stability. The way to improve the anti-electromigration performance is to make the film have larger grain size and higher degree of orientation. This film substrate also facilitates the further growth of large-grained photovoltaic device absorbing materials. Romeo, Italy and other developed a new thin film deposition process - quasi-liquid phase epitaxy, that is, below the melting point of the metal layer near the growth of single-oriented large-grained film. This method is less demanding on the substrate, the process is relatively simple.