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采用传统降温法生长了掺杂不同浓度的SO42-离子KDP晶体,研究分析了晶体的宏观缺陷及开裂形式,从晶体生长角度初步分析了硫酸盐掺杂导致KDP晶体开裂的主要原因。实验表明,随着SO42-离子掺杂浓度的增大,KDP晶体的主要开裂形式是垂直于生长层{101}面的裂纹;晶体中裂纹存在的区域都分布有大量层层平行于生长层的母液包藏。随着SO42-离子掺杂浓度的进一步增大,晶体内包藏呈云雾状分布,裂纹不规则,晶体质量严重下降,透明度降低。
The KDP crystals doped with different concentrations of SO42- ions were grown by the traditional cooling method. The macroscopic defects and cracking patterns of the crystals were studied. The main reasons for the KDP crystal cracking were preliminarily analyzed from the perspective of crystal growth. Experiments show that with the increase of SO42- ion doping concentration, the main cracking mode of KDP crystal is the crack perpendicular to the {101} plane of the growth layer. In the region where the crystal crack exists, a large number of layers are distributed parallel to the growth layer Mother liquid collection. With the further increase of the doping concentration of SO42- ion, the crystal inclusions are cloud-like, the cracks are irregular, the crystal quality is seriously degraded, and the transparency is decreased.