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采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构.对样品进行了低温光致发光谱和时间分辨光致发光谱的测量,结果表明激发功率和激发波长对室温下量子阱内电子的自旋弛豫时间有强烈的影响.对于常见的GaAs(100)量子阱起支配作用的D’yakonov-Perel’(DP)自旋弛豫机制,在GaAs(110)量子阱材料里被充分地抑制了.对于缺失了DP相互作用的GaAs(110)多量子阱,电子-空穴相互作用对自旋弛豫时间随激发功率变化有重要的影响.
GaAs / AlGaAs MQW structures were grown on GaAs (110) oriented substrates by solid-state source molecular beam epitaxy.The low-temperature photoluminescence and time-resolved photoluminescence spectra of the samples were measured and the results showed that the excitation The power and excitation wavelength have a strong influence on the spin relaxation time of the electrons in the quantum well at room temperature.The D’yakonov-Perel ’(DP) spin relaxation mechanism, which dominates the common GaAs (100) quantum well, Is sufficiently suppressed in the GaAs (110) quantum well material.For GaAs (110) MQWs lacking the DP interaction, the electron-hole interaction has a significant effect on the spin relaxation time with the variation of the excitation power .