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在用平面工艺制作半导体器件的过程中,SiO_2膜起着非常重要的作用,它被用作介质、扩散掩蔽、钝化层等。由此,对SiO_2膜的制备和特性,以及SiO_2/Si界面,进行了广泛的研究。在60年代作了大量基础工作,Schlegel编辑的两个文献索引应称这期间的重要文献。有关SiO_2用作半导体器件的隔离介质的文献已搜入新近的文献索引(见本刊1975年4～5期合刊)中,因此本索引只选录有关其它介质(氮化硅、氧化铝)的文献。
In the process of fabricating semiconductor devices by planar processes, the SiO 2 film plays a very important role as a medium, a diffusion mask, a passivation layer and the like. Thus, extensive studies have been conducted on the preparation and characteristics of the SiO 2 film and the SiO 2 / Si interface. In the 1960s a great deal of basic work was done, and the two literary references compiled by Schlegel should be cited as important documents during this period. The literature on the use of SiO 2 as a separation medium for semiconductor devices has been searched for in the recent literature index (see Articles 4 to 5 of 1975), so this index only lists the data of other media (silicon nitride, aluminum oxide) literature.