论文部分内容阅读
采用以碳纤维为碳源的固态源MBE技术，生长了不同厚度的重接碳GaAs以及具有不同表层厚度的δ碳掺杂GaAs，通过Nomarski干涉显微镜和原子力显微镜（AFM）对样品表面形貌的观察，分析了挨碳GaAs的生长过程和各种缺陷的产生，提出碳的掺入导致了GaAs材料的三维岛状生长，促进了各种缺陷的力生。提出了通过改善生长条件减少缺陷的途径。
The solid-state source MBE technology with carbon fiber as carbon source was used to fabricate reconnected carbon GaAs with different thickness and δ-carbon doped GaAs with different surface thicknesses. The surface morphology of samples was observed by Nomarski interference microscope and atomic force microscope (AFM) The growth process of GaAs and the generation of various defects were analyzed. It was proposed that the incorporation of carbon led to the growth of three-dimensional islands of GaAs materials and promoted the growth of various defects. Avenues for reducing defects by improving growth conditions were proposed.