阐述了电子回旋共振等离子体化学气相沉积法淀积半导体器件端面光学膜的优良特性，介绍了淀积反射率小于１０－４的１３１０ｎｍ半导体激光器端面增透膜技术，并对这种技术的优点和两端面淀积增透膜后的激光器特性进行了讨论 The excellent characteristics of the deposited end-face optical film of semiconductor device by electron cyclotron resonance plasma chemical vapor deposition are described. The 1310nm end-face anti-reflective coating technology with deposited reflectance of less than 10-4 is introduced. The advantages of this technique The characteristics of lasers after deposition of AR coatings on both ends were discussed