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对Ｋｕｚｎｅｔｓｏｖ采用的速率方程加以修正，考虑了俄歇效应的影响，载流子寿命不再作为常数处理，而写成载流子浓度的函数。由此导出了两段式半导体激光器存在双稳的必要条件，计算结果表明，吸收区偏置电流对双稳条件影响极大，对具体器件而言，若增益区和吸收区隔离电阻不够大，几个ｍＡ的偏置电流泄露到吸收区就使器件难以产生双稳。
The velocity equation adopted by Kuznetsov is modified to take account of the Auger effect and the lifetime of the carrier is no longer treated as a constant and is written as a function of the carrier concentration. The results show that the bias current of the absorption region has a great influence on the bistable condition. For a specific device, if the isolation resistance of the gain region and the absorption region is not large enough, Leakage of a few mA of bias current into the absorption area makes the device difficult to produce bistability.