使用光致抗蚀剂的全息干涉曝光、显影方法在GaAs(100)面衬底上形成光致抗蚀剂光栅图形.采用选择化学腐蚀将光致抗蚀剂光栅浮雕图形转换到GaAs(100)面衬底上.已成功地在GaAs(100)面衬底上制作了周期为0.33微米的光栅皱折.在GaAs(100)面上的光栅皱折具有良好的V-形沟槽轮廓. A photoresist raster pattern was formed on a GaAs (100) plane substrate using a holographic interference exposure of a photoresist and a developing method. The photoresist raster relief pattern was converted to a GaAs (100) plane by selective chemical etching Facet substrate has been successfully fabricated on a GaAs (100) facet substrate with a grating period of 0.33 The grating on the GaAs (100) face has a good V-shaped trench profile.