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通过荧光光谱研究了放电等离子体氧化的α Si∶H薄膜的荧光特性 ,在 45 0nm～ 5 0 0nm范围内常温下观察到强蓝光发射 ,发光强度随沉积氧化的周期数增加而增强。发射带呈七峰结构 ,位置分别为 46 0nm、46 5nm、472nm、478nm、485nm、490nm、496nm。实验结果直接证明了蓝光发射与缺陷能级有关 ,其起源于Si O结合特定组态而形成的发光中心。
Fluorescence spectra were used to study the fluorescence characteristics of the plasma-enhanced α Si:H thin films. Strong blue light emission was observed at room temperature from 45 0 to 500 nm, and the emission intensity increased with the increase of the number of cycles. The emission band showed a seven-peaked structure with 46Onm, 465nm, 472nm, 478nm, 485nm, 490nm and 496nm respectively. The experimental results directly prove that the blue emission is related to the defect level, which originated from the luminescence center formed by Si O combined with specific configurations.