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从理论上研究了电子-声子相互作用对正切平方量子阱中光吸收系数的影响,首先利用微扰论方法求出考虑极化子效应时正切平方量子阱的波函数和能级,然后利用密度矩阵算符理论和迭代法得到光吸收系数的解析表达式,最后以典型的GaAs/AlGaAs正切平方量子阱为例进行数值计算。结果表明,极化子效应对线性吸收系数、三阶非线性吸收系数和总吸收系数都有显著的影响,在相同光强的情况下极化子效应使光饱和吸收现象更加明显;考虑电声相互作用后,总吸收系数的改变量随着势阱宽度b的减小和势阱深度V0的增加而增大。
The effect of electron-phonon interaction on the optical absorption coefficient in the tangential square quantum well is theoretically studied. First, the wave function and energy level of the tangential square quantum well in consideration of the polaron effect are obtained by means of perturbation theory. Density matrix operator theory and iterative method to obtain the analytical expression of the optical absorption coefficient. Finally, a typical GaAs / AlGaAs tangent square quantum well is taken as an example for numerical calculation. The results show that the polaron effect has a significant effect on the linear absorption coefficient, the third-order nonlinear absorption coefficient and the total absorption coefficient, and the polarized sub-effect makes the light saturation absorption phenomenon more obvious under the same light intensity. Considering the electroacoustic After the interaction, the change of the total absorption coefficient increases with the decrease of the potential well width b and the increase of the well depth V0.