The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of the busbars and devices model are simulated in the electric simulator PSIM to analyze the effects of the parasitic inductance on the switching characteristics of the integrated gate commutatedthyristor (IGCT) in different topology positions. The simulation results agree well with the measured imped-ance analyzer results and the IGCT test results, which proves the effectiveness of the modeling method for the large, complex busbars.