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报道了K波段的PHEMTMMIC的设计与研制。PHEMT器件采用0.5μm栅长的3inchGaAs标准工艺制作。三级的MMIC放大器在18GHz处,线性增益17dB,输出功率P－1=19dBm。
Reported the design and development of K-band PHEMTMMIC. PHEMT devices using 0.5um gate length 3inchGaAs standard process. Three-stage MMIC amplifier at 18GHz, the linear gain of 17dB, the output power of P-1 = 19dBm.