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在集成电路制造厂的工艺监控体系中引入可靠性监控对于控制产品的可靠性十分重要。圆片级可靠性测试技术通过对集成电路产品的工艺过程进行可靠性检测,能够为集成电路制造工艺提供及时的可靠性信息反馈。圆片级可靠性测试通常是采用高加速应力对各种可靠性测试结构进行测试,以实现快速的工艺可靠性评价。对半导体集成电路圆片级可靠性测试的背景、现状和发展趋势进行了概况和探讨,介绍了目前在VLSI生产中应用最为广泛的栅氧化层经时击穿、电迁移和热载流子注入效应的可靠性测试结构。
The introduction of reliability monitoring in process monitoring systems at IC fabs is important to control the reliability of the product. Wafer-level reliability testing techniques provide reliable information on the reliability of integrated circuit manufacturing processes by reliably testing the IC process. Wafer-level reliability tests typically test various reliability test structures with high acceleration stress to achieve fast process reliability evaluations. The background, status quo and development trend of wafer level reliability testing of semiconductor integrated circuits are introduced and discussed. The most widely used gate oxide breakdown breakdown, electromigration and hot carrier injection Effect of reliability test structure.