强电场作用半导体非平衡载流子输运的瞬态特性研究

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根据量子统计理论,结合材料的晶格结构和能带特点,研究了半导体材料电子态的微观结构及非平衡载流子的量子统计分布特性;分析了电子-声子相互作用的微观状态和弛豫过程,对强电场作用下非平衡载流子的分布函数、弛豫过程及输运过程的非线性特性和瞬态特性进行了研究,揭示出非平衡载流子的微观相互作用及瞬态输运机理。 According to the quantum statistical theory and the lattice structure and energy band characteristics of the material, the electronic structure of the semiconductor material and the statistical distribution characteristics of the non-equilibrium carriers are studied. The microscopic states and relaxation of the electron-phonon interaction Yu process, under the strong electric field distribution of non-equilibrium charge carriers, the relaxation process and the transport process of nonlinear characteristics and transient characteristics were studied to reveal the non-equilibrium carrier micro-interaction and transient Transport mechanism.
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