论文部分内容阅读
研究了SiC/Mn二元体系反应和SiC/Cu/Mn三元体系反应。评价了利用无压熔渗工艺构建SiC/Cu复合材料的可能性及其利弊。通过XRD和SEM分析,研究了反应过程中的生成物相及其微观形貌。结果表明:Mn和SiC在N2中发生反应,在SiC表面生成了MnSiN_2。SiC的分解随温度的升高而加剧。在1250℃生成的Si_3N_4和石墨C的量很少,而随温度升至1350℃而大幅增加。SiC/Cu/Mn三元体系在1250℃N_2气氛中反应相组成除SiC和Cu外,主要为MnSiN_2和少量Si_3N_4、Cu_3Si以及石墨C。当温度升高至1350℃时,SiC分解严重,Si_3N_4和石墨C大幅增加。纯Cu粉在Mn助渗剂作用下在1350℃实现对SiC骨架的无压熔渗。
The reaction of SiC / Mn binary system and the reaction of SiC / Cu / Mn ternary system were studied. The potential advantages and disadvantages of constructing SiC / Cu composites by pressureless infiltration process were evaluated. By XRD and SEM analysis of the product during the reaction phase and its microscopic morphology. The results show that Mn and SiC react in N2 and MnSiN2 is formed on the surface of SiC. The decomposition of SiC intensifies with increasing temperature. The amount of Si_3N_4 and graphite C generated at 1250 ℃ is very small, but increases sharply with the temperature rising to 1350 ℃. The reaction phase composition of SiC / Cu / Mn ternary system in N2 atmosphere at 1250 ℃ is mainly composed of MnSiN2, a small amount of Si3N4, Cu3Si and graphite C except SiC and Cu. When the temperature is increased to 1350 ℃, SiC decomposes seriously, Si 3 N 4 and graphite C increase greatly. Pure Cu powder achieves pressureless infiltration of SiC skeleton at 1350 ℃ under Mn penetration enhancer.