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5. Formation and growth of fractal patterns in high energy P⁺-implanted silicon

Formation and growth of fractal patterns in high energy P⁺-implanted silicon

来源 :中国科学：技术科学英文版 | 被引量 : 0次 | 上传用户：wushupei

【摘 要】

：

The fractal patterns in implanted samples are observed. Possible correlation of fractal patterns with the annealing temperature and the electrical activation ra

【作 者】

：

吴瑜光 张通和 

【机 构】

：

InstituteofLowEnergyNuclearPhysics,RadiationBeam&,MaterialsEngineeringLaboratory,BeijingNormalUni

【出 处】

：

中国科学：技术科学英文版

【发表日期】

：

1997年4期

【关键词】

：

fractal patterns P+ high energy IMPLANTATION into silicon Zn + N IMPLANTATION in 

【基金项目】

：

Project supported by the National Natural Science Foundation of China.

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The fractal patterns in implanted samples are observed. Possible correlation of fractal patterns with the annealing temperature and the electrical activation ratio are given. The formation and growth process of fractal patterns are compared for implanted

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