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在垂直冷壁CVD反应器中进行了文题的探索性研究。以二乙胺基钛(Ti(NEt_2)_4)为源,在不锈钢或硬质合金基体上完成了氮化钛(TiN)和碳氮化钛(Ti(C,N))硬质薄膜低温下的淀积。发现(TiN)和(Ti(C,N))分别在773K和973K下形成;在操作范围内整个反应器流场由自由对流控制;反应过程由表面过程控制;反应活化能为235 kJ/mol;二乙胺基钛反应级数为1级。进行了热力学计算,提出了反应历程假设。结果表明:用二乙胺基钛进行MOCVD淀积含钛硬质薄膜可以降低温度,以扩大基体的选用范围,为获得硬质薄膜提供了一条新的途径。
An exploratory study of the topic was conducted in a vertical cold wall CVD reactor. Titanium nitride (TiN) and titanium carbonitride (Ti (C, N)) thin films were formed on stainless steel or cemented carbide substrates with Ti (NEt_2) _4 as a source at low temperature Deposition. It was found that TiN and TiC formed at 773K and 973K, respectively. The flow field of the reactor was controlled by free convection in the operating range. The reaction process was controlled by surface process. The activation energy of the reaction was 235 kJ / mol ; Diethylamino titanium reaction grade 1 grade. The thermodynamic calculation was carried out, and the reaction history hypothesis was put forward. The results show that MOCVD deposition of titanium-based hard films with diethylamino titanium can decrease the temperature and enlarge the selection range of the matrix, providing a new way for obtaining hard films.