论文部分内容阅读
设计并实现了一种应用于多通道CdZnTe探测器的低噪声前端读出专用电路,并对其性能进行了测试与评估。每个读出通道由电荷灵敏放大器、漏电流补偿电路、零极相消电路、CR-(RC)4整形器、输出缓冲器以及反相放大器组成。芯片采用TSMC 0.35μm CMOS工艺实现,尺寸为2.6mm×2.2mm。测试结果表明,读出通道的能量分辨范围为5~375keV,每通道功耗小于3.5mW,最小等效噪声电荷仅为49.6e-。将EV公司的CdZnTe探测器与该前端读出电路芯片相连,组成辐射检测系统,并使用241 Am源进行能谱分析,所得能谱主峰的能量分辨率仅为5.2%。
A low-noise front-end readout dedicated circuit for multi-channel CdZnTe detector is designed and implemented, and its performance is tested and evaluated. Each sense channel consists of a charge-sensitive amplifier, a leakage current compensation circuit, a zero-pole cancellation circuit, a CR- (RC) 4 shaper, an output buffer, and an inverting amplifier. Chip using TSMC 0.35μm CMOS technology to achieve the size of 2.6mm × 2.2mm. The test results show that the read channel energy resolution range of 5 ~ 375keV, each channel power consumption is less than 3.5mW, the minimum equivalent noise charge is only 49.6e-. The CdZnTe detector from EV Company was connected to the front-end read-out circuit chip to form a radiation detection system. The energy spectrum of the main peak of energy spectrum was only 5.2% with 241 Am source.