在传统硅基器件日益趋近物理极限的背景下,石墨烯场效应晶体管(GFET)作为一种新型纳米器件受到广泛的关注。介绍了GFET的主要器件结构,分析了GFET的工作原理及其基本的电特性。对比论述了4种石墨烯的带隙调控方法,得出化学掺杂法和量子限制法在调控石墨烯带隙方面比外加电场调节法和引入应力法更具有实用价值。重点探讨了几种GFET有源层石墨烯薄膜的制备方法:外延生长法、剥离法、化学气相沉积法(CVD)、氧化石墨烯还原法、旋涂法以及喷涂法,并对比分析了各种制备方法的优缺点。最后概述了GFET的应用前景和挑战。 In the background that traditional silicon-based devices are getting closer to the physical limit, graphene field-effect transistors (GFETs) have attracted much attention as a new kind of nanodevices. The main device structure of GFET is introduced, the working principle of GFET and its basic electrical characteristics are analyzed. The bandgap control methods of four kinds of graphene are discussed. The results show that the chemical doping and quantum confinement methods are more practical than the electric field adjustment and the introduction stress method in controlling the band gap of graphene. The preparation methods of several GFET active layer graphene films are discussed emphatically: epitaxial growth method, lift-off method, chemical vapor deposition method (CVD), graphene oxide reduction method, spin-coating method and spraying method. The advantages and disadvantages of the preparation method. Finally, the application prospect and challenge of GFET are summarized.