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使用硅溶胶、pH值调节剂、表面活性剂和氧化剂等组分配制抛光液,通过超声波发生器雾化后,在负压下导入抛光区域界面进行CMP实验,并在相同的抛光参数下,与SSP-L抛光液常规抛光进行了比较。结果表明:当磨粒质量分数为20%、pH值为11、表面活性剂和氧化剂的质量分数分别为0.5%和2%时,材料去除率MRR达到490 nm/min,表面粗糙度Ra为2.72 nm。配制的抛光液的雾化抛光效果和SSP-L抛光液常规抛光效果接近,而雾化抛光液用量接近常规抛光液的1/10。分析原因是雾化液均匀的化学组分以及在界面化学反应中的高活性、强吸附性,有利于材料去除和形成超精细的表面。
The polishing solution was prepared by using silica sol, pH adjuster, surfactant and oxidizer. After atomized by ultrasonic generator, it was introduced into the polishing area interface under negative pressure to carry out CMP experiment. Under the same polishing parameters, SSP-L polishing solution was compared with conventional polishing. The results show that the MRR of the material is 490 nm / min and the surface roughness Ra is 2.72 when the abrasive weight fraction is 20%, the pH value is 11, the mass fraction of surfactant and oxidizer is 0.5% and 2% nm. The polishing effect of the prepared slurry is similar to that of the SSP-L slurry, but the dosage of the atomized slurry is close to 1/10 of the conventional slurry. The reason for the analysis is that the uniform chemical composition of the atomized liquid and the high activity and strong adsorption in the interface chemical reaction are favorable for material removal and the formation of an ultrafine surface.