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利用纳米划痕仪及曲率半径为3μm的球形金刚石针尖,在单晶硅(100)表面进行了不同载荷下的划痕试验.结果表明:随载荷的增加,单晶硅表面的划痕损伤先后经历了从凸起形成、凸起与凹槽并存到材料去除的变化过程.当载荷为0.5～3.0mN时,单晶硅上的划痕损伤表现为凸结构的形成,且凸起的高度和体积随载荷的增加而增大;当载荷为3～50mN时,凸起和凹槽同时出现,但损伤区域体积未见减少,损伤仍以凸结构形成为主导;当载荷大于50mN时,凹槽深度和磨损体积明显增大,划痕损伤表现为典型的材料去除.进一步的分析显示,单晶硅的划痕损伤特征与其接触区的应力状态密切相关,低载下的摩擦剪切是凸结构产生的主要原因.
Scratch tests on single-crystal silicon (100) under different loads were carried out by means of a nano-scratch tester and a spherical diamond tip with a radius of curvature of 3. The results show that the scratch damage on the surface of single- Which experienced the process of material removal from the formation of protrusions and the coexistence of protrusions and grooves.When the load is 0.5-3.0 mN, the scratch damage on the single crystal silicon is manifested as the formation of convex structures, and the height of the protrusions and The volume increases with the increase of load; when the load is 3 ~ 50mN, the bulge and groove simultaneously appear, but the volume of the damaged area is not reduced, the damage is still dominated by the convex structure; when the load is more than 50mN, the groove The depth and volume of wear increased obviously, and the scratch damage showed a typical material removal.Further analysis showed that the scratch damage characteristics of single crystal silicon are closely related to the stress state of the contact area, and the friction shear under low load is convex structure The main reason