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在阐述双向晶闸管换向理论的基础上，推导出了器件换向电压临界上升率的数学表达式，提出了改善器件换向能力的主要措施，并指出门极短路结构和１２ＭｅＶ电子局部辐照工艺是提高大功率双向晶闸管换向能力的一种有效的结构和技术．
Based on the theory of bidirectional thyristor commutation, the mathematical expression of the critical rising rate of commutation voltage of the device is deduced. The main measures to improve commutation capability of the device are proposed. It is pointed out that the gate short circuit structure and 12MeV electron local irradiation Is to improve high-power bidirectional thyristor commutation capability of an effective structure and technology.