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应用缓冲层对自组装结构的作用能Er 和自组装结构表面能Es 的协同作用分析了InP自组装结构在GaxIn1 -xP缓冲层表面的形貌变化 .计算发现缓冲层组分影响自组装结构的形貌 .随着缓冲层与InP自组装结构之间应力的增加 ,InP岛倾向于拉长 .理论计算还发现随着自组装结构体积的增大 ,自组装结构也随之拉长 .而且缓冲层的参数决定了自组装结构最小能量状态时的体积大小 .应用金属有机物化学气相沉积技术在GaAs衬底上生长了不同的InP GaInP体系 ,并对实验得到的自组装体系形貌进行了分析 .实验结果证实了以上的理论分析 .
The effect of buffer layer on the interaction between the self-assembled structure Er and the surface energy Es of the self-assembled structure was analyzed. The morphology of the InP self-assembled structure on the surface of GaxIn1-xP buffer layer was analyzed. Morphology.With the increase of stress between the buffer layer and InP self-assembly structure, InP islands tend to elongate.The theoretical calculations also found that with the self-assembly structure volume increases, self-assembled structure also will be elongated.And buffer The parameters of the layer determine the volume of the self-assembled structure at the minimum energy state.Different InP GaInP systems were grown on the GaAs substrate by metal organic chemical vapor deposition, and the morphology of the self-assembled system was analyzed. The experimental results confirm the above theoretical analysis.