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全方位反射镜(ODR)AlGaInP发光二极管能够有效提高光提取效率。对全方位反射镜的设计及工艺进行优化:采用λ/4n厚的SiO2作为介质,光刻腐蚀导电孔,带胶保护,溅射AuZnAu,剥离后,再溅射300nmAu层,形成的ODR退火后在波长630nm处的反射率为72.1%,而单次溅射AuZnAu的反射率退火后为63.2%。实验结果说明新工艺满足了欧姆接触的需要,反射率提高了8.8%。
Omni-directional mirror (ODR) AlGaInP light-emitting diodes can effectively improve light extraction efficiency. The omni-directional reflector design and process optimization: the use of λ / 4n thick SiO2 as a medium, photolithography corrosion conductive hole, with plastic protection, sputtering AuZnAu, stripped, and then sputtered 300nmAu layer, the formation of the ODR after annealing The reflectance at a wavelength of 630 nm was 72.1%, whereas the reflectance of a single sputtered AuZnAu annealed at 63.2%. The experimental results show that the new process meets the need of ohmic contact and the reflectivity is increased by 8.8%.