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采用磁控共溅射法并结合微波退火和快速光热退火工艺,在不同退火温度下制备了含硅量子点的富硅SiC_x薄膜。采用掠入射X射线衍射(GIXRD)、拉曼光谱和光致发光(PL)光谱技术对薄膜进行了表征,研究了退火工艺对薄膜中硅量子点数量、尺寸、晶化率以及发光峰的影响。结果表明:与快速光热退火相比,微波退火不但能降低硅量子点的形成温度(降低200℃),而且还能降低β-SiC量子点的形成温度(降低100℃);在相同退火温度下,微波退火制备的硅量子点的数量更多、晶化率更高、光致发光峰更强;采用1000℃温度的微波退火样品的硅量子点数量最多、尺寸最大(5.26nm)、晶化率最高(74.25%)、发光峰最强,说明微波退火能凝析出高质量的硅量子点。
The silicon-rich SiC_x films containing silicon quantum dots were prepared by magnetron sputtering method combined with microwave annealing and rapid photothermal annealing process at different annealing temperatures. The films were characterized by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and photoluminescence (PL) spectroscopy. The effects of annealing process on the quantum dots, size, crystallization rate and luminescence peak of silicon quantum dots were studied. The results show that microwave annealing not only decreases the formation temperature of silicon quantum dots (200 ℃), but also decreases the formation temperature of β-SiC quantum dots (100 ℃) compared with rapid thermal annealing. At the same annealing temperature , The number of silicon quantum dots prepared by microwave annealing is more, the crystallization rate is higher, and the photoluminescence peak is stronger. The number of silicon quantum dots (5.26nm) and the largest size (5.26nm) The highest rate (74.25%), the strongest luminescence peak, indicating that microwave annealing can condense out high-quality silicon quantum dots.