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为实现多晶硅薄膜晶体管有源矩阵液晶显示器的实用化与产业化 ,低温 (<6 0 0°C)、快速制备高质量多晶硅薄膜已成为研究热点。文中将微波加热技术应用于金属诱导 a- Si薄膜横向晶化工艺中 ,成功实现了低温快速制备多晶硅薄膜。通过薄膜电阻率的测试 ,分析了多晶硅薄膜的电学特性。
In order to realize the practical and industrialization of polycrystalline silicon thin film transistor active matrix liquid crystal display, rapid preparation of high quality polycrystalline silicon thin films has become a research focus at low temperature (<600 ° C). In this paper, microwave heating technology is applied to the lateral crystallization of a-Si film induced by metal, and the polycrystalline silicon thin film is successfully fabricated at low temperature. The electrical properties of polycrystalline silicon thin films were analyzed by measuring the film resistivity.