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将高纯Cu,In和S粉末按1:0.1:1.2(原子个数比)配比混合均匀,热蒸发沉积CuInS2薄膜,再将薄膜进行热处理。研究热处理工艺对薄膜性能和导电类型转换的影响。本研究制备的薄膜经360℃,30 min的热处理,得到n型、黄铜矿结构的CuInS2薄膜,平均晶粒尺寸29.43 nm。经370℃,20 min热处理的CuInS2薄膜也呈n型,平均晶粒尺寸38.23 nm。霍尔效应测试显示上述两种n型CuInS2薄膜的导电性良好,迁移率分别为1.071 cm2/V·s和53.82 cm2/V·s。能谱分析给出,CuInS2薄膜(360℃)体内原子个数比Cu:In:S=1:1.2:1.6,S元素损失较多。CuInS2薄膜(370℃,20 min)的原子个数比为1:0.8:1.4,S和In元素的含量较少;扫描电子显微镜给出薄膜表面呈颗粒状,随热处理温度增加,薄膜表面的致密性变好但粗糙度增大,370℃,30 min热处理后CuInS2的晶相结构不变,导电类型转为p型,迁移率为1.071 cm2/V·s。
The high purity Cu, In and S powders were mixed uniformly according to the ratio of 1: 0.1: 1.2 (atomic ratio), CuInS2 film was deposited by thermal evaporation, and then the film was heat treated. The effect of heat treatment on the film properties and conductivity type conversion was investigated. The films prepared in this study were heat treated at 360 ℃ for 30 min to obtain n-type and chalcopyrite-based CuInS2 thin films with an average grain size of 29.43 nm. The CuInS2 film heat-treated at 370 ℃ for 20 min also showed n-type and the average grain size was 38.23 nm. Hall effect test showed that the two n-type CuInS2 films showed good conductivity with mobility of 1.071 cm2 / V · s and 53.82 cm2 / V · s, respectively. The energy spectrum analysis shows that the atomic number ratio of CuInS2 film (360 ℃) is more than that of Cu: In: S = 1: 1.2: 1.6. The atomic ratio of CuInS2 thin film (370 ℃, 20 min) is 1: 0.8: 1.4, and the contents of S and In are less. The scanning electron microscope shows that the surface of the film is grainy. With the increase of heat treatment temperature, However, the surface morphology of CuInS2 is not changed after the heat treatment at 370 ℃ for 30 min, and the conductivity type is p-type. The mobility is 1.071 cm2 / V · s.