为了获得高功率、窄脉冲探测激光,提出了一种基于雪崩效应的小型半导体激光激励源电路实现方案,分析了激励电路产生高压窄脉冲信号的原理,介绍了其组成单元信号整形电路、直流偏置电路和高压脉冲产生电路的硬件设计。测试表明,该电路能够输出电压约460V、脉宽小于6.0ns、下降沿约2.5ns的脉冲激励信号,印证了原理设计的正确性。该电路具有高性能、小体积、高可靠和易适装的应用特点,能够有效满足某激光引信对激光激励电路的任务要求。 In order to obtain high-power, narrow-pulse laser, a scheme of a small semiconductor laser excitation source circuit based on avalanche effect is proposed. The principle of high voltage and narrow pulse signal generated by the excitation circuit is analyzed. The components shaping circuit, DC bias Hardware Design of Circuit and High Voltage Pulse Generator. The test shows that the circuit can output a pulse excitation signal of about 460V, a pulse width of less than 6.0ns and a falling edge of about 2.5ns, which proves the correctness of the principle design. The circuit has high performance, small size, high reliability and easy to fit the application characteristics, can effectively meet the laser fuze of a laser driver circuit requirements.