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将石墨衬底浸泡于0.5mol/LNi(NO3)2溶液中一段时间,之后利用低压化学气相沉积法在不同温度的条件下生长碳纳米管薄膜。研究了碳纳米管的生长温度对其场发射性能的影响。通过扫描电子显微镜和拉曼光谱对生长的碳纳米管薄膜的表征发现,随着碳纳米管的生长温度的增加,碳纳米管的直径与相应拉曼光谱中的G峰和D峰(ID/IG)的峰强比减小。同样,碳纳米管的G峰的半峰宽随着碳纳米管的生长温度的增加而减小,这表明碳纳米管的石墨化程度的增强。实验中发现,碳纳米管的场发射性能依赖于碳纳米管的生长温度。
The graphite substrate was immersed in 0.5mol / LNi (NO3) 2 solution for a period of time, and then the carbon nanotube film was grown under different temperature by low pressure chemical vapor deposition. The effect of the growth temperature of carbon nanotubes on the field emission properties was investigated. Characterization of the grown carbon nanotube films by scanning electron microscopy and Raman spectroscopy found that as the growth temperature of the carbon nanotubes increased, the diameters of the carbon nanotubes and the corresponding G- and D-peaks in the Raman spectrum (ID / IG) peak to peak ratio decreases. Likewise, the half-width of the G-peak of the carbon nanotube decreases as the growth temperature of the carbon nanotube increases, indicating an increase in the degree of graphitization of the carbon nanotube. The experiment found that the field emission properties of carbon nanotubes depend on the growth temperature of carbon nanotubes.