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为了实现半导体激光器的单侧模稳定工作,提出了一种在激光器的脊条两侧引入光子晶体结构滤除半导体激光器高阶侧模的方法。通过调整激光器上表面的刻蚀深度、光子晶体区域的条宽和间隔来改变激光器内部的模场分布,同时结合选择性的载流子注入来增强基模的激射优势,进而减少侧模的数量。实验上制作了主脊条宽度为6μm,光子晶体周期5μm,波长1 550 nm的半导体激光器。测试结果表明:在连续工作的情况下,电流300 mA的时候,高阶侧模受到抑制,水平发散角变为10.2°,证实了光子晶体结构调制激光器侧模的可行性。
In order to realize the stable operation of the single-mode semiconductor laser, a method of filtering the high-order side mode of the semiconductor laser by introducing a photonic crystal structure on both sides of the ridge of the laser is proposed. By adjusting the etching depth of the upper surface of the laser, the width and spacing of the photonic crystal region to change the mode field distribution within the laser, combined with selective carrier injection to enhance the lasing advantage of the fundamental mode, thereby reducing the side mode Quantity. Experimental production of the main ridge width of 6μm, photonic crystal period 5μm, wavelength of 1 550 nm semiconductor laser. The test results show that the high-order side mode is suppressed and the horizontal divergence angle is 10.2 ° at the current of 300 mA, which confirms the feasibility of the side mode of the photonic crystal structure modulation laser.