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用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果
The CuMgF2 composite cermet films with 10%, 15%, 20% and 30% Cu contents were prepared by radio-frequency magnetron co-sputtering method. XRD, XPS, The microstructure, composition and electrical conductivity of the films were investigated by microstructure analysis.The results show that the prepared Cu-MgF2 composite films are composed of fcc Cu crystalline nano-particles embedded in a MgF2 ceramic matrix which is mainly amorphous, Cu The average grain size increases from 11 9 nm to 17 8 nm with the increase of the composition.The results of the conductance tests in the temperature range of 0 0-3 000 K show that when Cu content increases from 15% to 20% The resistance of MgF2 composite film is reduced by 8 orders of magnitude, and the obtained composite film infiltration threshold qCM should be between 15% and 20% .The film with qM between 10% and 15% The films between 20% and 30% are in the state of metal conduction.The activation energy of impurity and intrinsic conductance and its contribution to conductance are discussed in theory, and the effects of Cu MgF2 composite nano-metal The penetration threshold of ceramic thin films has been agreed experimentally result