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研制了隔行扫描单片式内线转移结构512×512元PtSi肖特基势垒红外电荷耦合器件(CCD)。器件采用最小2μm设计规则,两层多晶硅结构。器件的像元尺寸为36μm(H)×34μm(V),填充系数为40％。器件工作在80K温度下。在阵列帧频为30帧每秒及镜头为 F/1条件下,器件噪声等效温差为0.15K。用1000K黑体测得其探测率D~*为1×10~(10)cm·Hz~(1/2)/W。对器件设计及性能测试结果进行了介绍。
A 512 × 512 element PtSi Schottky barrier infrared charge-coupled device (CCD) with interlaced monolithic interline transfer was developed. The device uses a minimum 2μm design rule, two layers of polysilicon structure. The device has a cell size of 36 μm (H) × 34 μm (V) and a fill factor of 40%. Device work at 80K temperature. Under the frame rate of 30 frames per second and the lens F / 1, the equivalent temperature difference of the device noise is 0.15K. The detection rate of D ~ * was 1 × 10 ~ (10) cm · Hz ~ (1/2) / W with 1000K black body. The device design and performance test results are introduced.