论文部分内容阅读
目前,先进的VLSI器件要求提高器件开关速度,提高抗噪音能力,并要求把芯片尺寸减至最小。最近,在VLSI制造领域,兆电子伏(以下简称MeV)离子注入引起了人们极大的注意,因为对于VLSI制造提出的要求,预计它是最可行的解决办法之一。为了实现这种可能性,第一次在离子注入领域中采用了RFQ(射频四极透镜)加速器,并且已经研制成功一台“RFQ—1000”MeV离子注入机。首先,本文将简要地介绍这种注入机研制的基本情况,重点则放在介绍RFQ上。其次是概括性地给出系统结构和特征。接下来是介绍注入机的详细性能,如束流的大小,能量的可变范围,剂量的均匀性,尘粒性能等等。然后,把着眼点放在应用上,简要地评述了MeV离子注入在器件制造中应用的目前状况。最后展望了这种注入机今后在化合物半导体和对材料表面改性方面应用的前景。
At present, the advanced VLSI device demands to improve the switching speed of the device, improve the anti-noise ability, and require to reduce the chip size to the minimum. Recently, megavoltvoltage (hereinafter referred to as MeV) ion implantation has drawn great attention in the field of VLSI fabrication because it is expected to be one of the most feasible solutions for the requirements of VLSI fabrication. For the first time, RFQ (radio frequency quadrupole lens) accelerators have been used in the field of ion implantation and a “RFQ-1000” MeV ion implanter has been developed. First of all, this article will briefly introduce the basic situation of this injection machine development, the focus is on the introduction of RFQ. The second is a summary of the system structure and features. The next step is to introduce the detailed performance of the implanter, such as beam size, variable range of energy, uniformity of dose, dust particle performance, and more. Then, focusing on the application, a brief review of the current state of application of MeV ion implantation in device fabrication was made. Finally, the future prospects of this kind of implanter for compound semiconductors and surface modification of materials are prospected.