SiC monocrystal substrates are implanted by Pd ions with different ion-beam energies and fl uences, and the effects of Pd ion implantation on wettability of Si/SiC and Al–12Si/SiC systems are investigated by the sessile drop technique. The decreases of contact angles of the two systems are disclosed after the ion implantation, which can be attributed to the increase of surface energy (σSV) of SiC substrate derived from high concentration of defects induced by the ion-implantation and to the decrease of solid–liquid surface energy (σSL) resulting from the increasing interfacial interactions. This study can provide guidance in improving the wettability of metals on SiC and the electronic packaging process of SiC substrate.