论文部分内容阅读
Using the configuration-integration methods(CI)[Phys.Rev.B 45(1992)19],we report the results ofthe Hydrogenic-impurity ground state in a GaAs/AlAs spherical quantum dot under an electric field.We discuss thevariations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D,the radius R of the quantum dot,and also as a function of electric field F.We find that the ground energy and bindingenergy of impurity placed anywhere depend strongly on the position of impurity.Also,electric field can largely changethe Hydrogenic-impurity ground state only limiting to the big radius of quantum dot.And the differences in energy leveland binding energy are observed from the center donor and off-center donor.
Using the configuration-integration methods (CI) [Phys. Rev. B 45 (1992) 19], we report the results of the Hydrogenic-impurity ground state in a GaAs / AlAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F.We find that the ground energy and bindingenergy of impurity placed ー depend strongly on the position of impurity. Also, electric field can substantially change the Hydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy leveland binding energy are observed from the center donor and off-center donor.