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本文提出了一种测定双极型晶体管重掺杂发射区中禁带宽度和少子复合寿命的方法.利用电流增益的温度特性,可计算出禁带宽度;通过计算发射区中少子反向饱和电流,可计算出少子复合寿命.考虑到发射区中重掺杂效应,本文采用了费米-狄拉克统计分布.此测定方法简便而实用.
In this paper, a method to determine the bandgap and minority-component recombination lifetime in the heavily doped emitter region of a bipolar transistor is proposed. By using the temperature characteristic of the current gain, the forbidden band width can be calculated. , We can calculate the lifetime of minority son recombination.According to the heavy doping effect in the emitter region, the Fermi-Dirac statistical distribution is adopted in this paper.The method is simple and practical.