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用反应沉积法 (RDE)制备了一系列铁钴硅化物即 Fe( 1 - x) Cox Si2 薄膜 ,样品中掺杂的 Co含量由卢瑟福背散射 (RBS)确定。本文研究了样品的光学性质 :室温下在 0 .2 6～ 4.80 e V的光子能量范围内 ,用椭圆偏振光谱仪测量了样品的复介电函数谱。实验发现 ,Fe( 1 - x) Cox Si2 薄膜的介电函数强烈地依赖于薄膜的状态 :a)对于 β相的 Fe( 1 - x ) Cox Si2 样品 ,其介电函数谱在红外低能区呈现出干涉峰 ,对应于半导体态 ;b)对于同时存在 β相和 Σ相的混合相 Fe( 1 - x ) Cox Si2 样品 ,其介电函数谱呈现出半导体和金属的混合态特征 ;c)对于Σ相的 Fe( 1 - x) Cox Si2 样品 ,其介电函数谱呈现出明显的金属态特征。 XRD实验结果表明 ,样品介电函数谱的差异来源于薄膜中不同的 Fe- Si相 ,而与样品中掺 Co量的多少并无一定关系
A series of Fe (1 - x) Cox Si2 films were prepared by reaction deposition method (RDE). The content of Co doped in the samples was determined by Rutherford backscattering (RBS). In this paper, the optical properties of the samples were studied: the complex dielectric function spectrum of the samples was measured by ellipsometer at a photon energy range of 0.226 ~ 4.80 eV at room temperature. It was found that the dielectric function of Fe (1 - x) Cox Si2 film strongly depends on the state of the film: a) For the Fe (1 - x) Cox Si2 sample with β phase, the dielectric function spectrum appears in the infrared low energy region B) For mixed Fe (1 - x) Cox Si2 samples with both β phase and Σ phase, the dielectric function spectrum shows a mixed state of semiconductors and metals; c) For the The dielectric function spectrum of ΣΣ phase Fe (1 - x) Cox Si2 shows obvious metallic state. The XRD results show that the difference of the dielectric function spectra of the samples comes from different Fe-Si phases in the films, but not with the amount of Co doped in the samples