以解析公式的推导、位移损伤实验结果以及位移效应的数值模拟结果为基础,分析了位移效应产生的缺陷作为非辐射复合中心和多数载流子陷阱两种情形下的激光二极管阈值电流、外微分量子效率及I-V特性随辐照注量的变化规律。通常的实验注量范围内,缺陷主要作为非辐射复合中心,导致激光二极管阈值电流随注量呈线性增大,但外微分量子效率基本不变,I-V特性低压区电流增大;当辐照注量较高,引起明显的多数载流子去除效应时,阈值电流随注量的增大不再呈线性关系,同时外微分量子效率下降,I-V特性高压区的电流减小。 Based on the derivation of the analytical formula, experimental results of displacement damage and numerical simulation of displacement effect, the defects caused by the displacement effect are analyzed as the thresholds of laser diode current, external differential Quantum efficiency and IV characteristics with the variation of radiation flux. In the range of normal experimental fluence, the defect mainly acts as the non-radiative recombination center, which leads to the laser diode threshold current linearly increasing with the fluence, but the external differential quantum efficiency remains unchanged and the IV characteristic low-voltage current increases. The higher the amount, causing a significant majority carrier removal effect, the threshold current is no longer linear with the increase of fluence, while the extrinsic differential quantum efficiency decreases, IV characteristics of the high-voltage current decreases.