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A common-base four finger InGaAs/InP double heterostructure bipolar transistor(DHBT) has been designed and fabricated using triple mesa structure and planarization technology.All processes are on 3-inch wafers. The area of each emitter finger is 1×15μm~2.The maximum oscillation frequency(f_(max)) is 325 GHz and the breakdown voltage BV_(CBO) is 10.6 V,which are to our knowledge both the highest f_(max) and BV_(cbo) ever reported for InGaAs/InP DHBTs in China.The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.
A common-base four finger InGaAs / InP double heterostructure bipolar transistor (DHBT) has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm ~ 2 The maximum oscillation frequency (f_ (max)) is 325 GHz and the breakdown voltage BV_ (CBO) is 10.6 V, which are to our knowledge both the highest f_ (max) and BV_ (cbo) ever reported for InGaAs / InP DHBTs in China. High speed InGaAs / InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.