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采用射频磁控反应溅射在金刚石/Si衬底上制备不同Sc含量的Sc_xAl_(1-x)N薄膜,并研究了Sc掺杂对薄膜沉积速率、表面粗糙度、晶体取向及压电性能的影响。结果表明,薄膜沉积速率随Sc靶功率的增加近似呈线性增长;合适的Sc掺杂能降低Sc_xAl_(1-x)N薄膜的表面粗糙度,提高AlN的C轴择优取向程度,并增强薄膜的压电性能;在0~34%范围内Sc的最优掺杂量为19%,此时薄膜整体质量最高,其表面粗糙度为2.95 nm,AlN(002)取向摇摆曲线半高宽为2.8°,压电常数为11.6 pm/V。
The Sc_xAl_ (1-x) N thin films with different content of Sc were prepared by RF magnetron reactive sputtering on a diamond / Si substrate. The effect of Sc doping on the deposition rate, surface roughness, crystal orientation and piezoelectric properties influences. The results show that the film deposition rate increases linearly with the increase of Sc target power. The suitable Sc doping can reduce the surface roughness of the Sc_xAl_ (1-x) N thin film, increase the C axis preferred orientation of AlN, Piezoelectric properties. The optimum doping amount of Sc in the range of 0-34% was 19%. The overall film quality was the highest at this time. The surface roughness was 2.95 nm, and the full width at half maximum (FWHM) of AlN (002) , The piezoelectric constant is 11.6 pm / V.