论文部分内容阅读
采用分子束外延方法生长的PIN型InP/InGaAs/InP双异质结材料制备了正照射256×1元近红外探测器,并与128×1奇偶两路读出电路互连,制备了近红外256×1元焦平面探测器.针对近红外InGaAs焦平面探测器中的无效像元问题,通过光学显微镜、扫描电镜和电学测试将无效像元进行分类,并分析了无效像元产生的原因.研究结果表明光敏芯片较低的零偏电阻、键压过程引入的损伤和虚焊以及钝化膜侧面覆盖较薄导致了无效像元的产生,通过光敏芯片设计结构改进和钝化膜工艺优化,消除了近红外256×1元InGaAs焦平面探测器的无效像元.
A positive-shot 256 × 1-element near-infrared detector was fabricated by PIN-type InP / InGaAs / InP double heterojunction materials grown by molecular beam epitaxy and interconnected with 128 × 1 even and odd readout circuits to prepare near-infrared 256 × 1 element focal plane detector.In view of the invalid pixels in the near infrared InGaAs focal plane detector, the invalid pixels are classified by optical microscope, scanning electron microscope and electrical test, and the causes of the invalid pixels are analyzed. The results show that the low bias voltage of the photosensitive chip, the damage induced by the bonding process and the thinner side coverage of the passivation film lead to the generation of ineffective pixels. Through the design of the photosensitive chip and the optimization of passivation film technology, Eliminate invalid pixels of near-infrared 256 × 1 InGaAs focal plane detectors.